SCIENCE CHINA Materials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . $57,&/(6
mater.scichina.com link.springer.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . Published online 29 August 2017 | doi: 10.1007/s40843-017-9078-1
Sci China Mater 2017, 60(9): 829–838
(QKDQFHG SHUIRUPDQFH RI VRODU FHOOV YLD DQFKRULQJ
&X*D6 TXDQWXP GRWV
Jinjin Zhao1,2,3† , Zhenghao Liu1,3†, Hao Tang4, Chunmei Jia1, Xingyu Zhao1, Feng Xue5, Liyu Wei1,3,
Guoli Kong1, Chen Wang1 and Jinxi Liu1
ABSTRACT
Ternary I–III–VI quantum dots (QDs) of
chalcopyrite semiconductors exhibit excellent optical properties in solar cells. In this study, ternary chalcopyrite CuGaS2
nanocrystals (2–5 nm) were one-pot anchored on TiO2 nanoparticles (TiO2@CGS) without any long ligand. The solar cell
with TiO2@CuGaS2/N719 has a power conversion efficiency of
7.4%, which is 23% higher than that of monosensitized dye
solar cell. Anchoring CuGaS2 QDs on semiconductor nanoparticles to form QDs/dye co-sensitized solar cells is a promising and feasible approach to enhance light absorption,
charge carrier generation as well as to facilitate electron injection comparing to conventional mono-dye sensitized solar
cells.
Keywords: CuGaS2, quantum dots, TiO2 nanoparticles, solar
cells, photo-anode
INTRODUCTION
Quantum-dot-sensitized solar cells (QDSSCs) have gained
more attention as a promising option for next-generation
solar cells [1–5] due to the quantum confinement effect
[6], large dipole moment, high molar coefficients, multiple-exciton generation (MEG), low cost and facile fabrication [7–12]. The chalcopyrite semiconductor quantum
dots (QDs), such as CdS(Se) [13–20], PbS(Se) [21–24],
SnSe2 [25], InAs [26,27], Sb2S3 [28], were introduced into
QDSSCs as light-harvesting sensitizers via various methods. Since photons with lower energy could be absorbed,
the chalcopyrite semiconductor QDs are considered as a
promising candidate for the high-efficiency solar cells
1
2
3
4
5
[29]. The reported semiconductor QDs in QDSSCs were
mainly attributed to the binary semiconductor materials.
To date, a few ternary semiconductor QDs have been
reported in the field of solar cells [30]. Inspired by these
researches, the ternary I–III–VI QDs of AIBIIIC2VI (A =
Cu, Ag; B = Al, Ga, In; C = S, Se, Te) chalcopyrite
semiconductors are expected to exhibit excellent optical
properties [31,32]. Recently, some of them have been
reported applied on solar cells, such as CuInS2, CuInSe2,
CuInSexS2−x and CuInxGa(1−x)S2 [33–38], which attracted
great attention to serve as Pb/Cd-free light-harvesting
materials in QDSSCs. Among these ternary semiconductors, CuGaS2 is the most promising ternary compound due to its conductivity, normally p-type [39], large
direct band gap energy [40], facile fabrication [38,41], and
environmental friendliness. CuGaS2 nanocrystals exhibit
excellent activity in solar water splitting [42,43], biological
and chemical sensing [44,45]. Ascribing to its wide band
gap energy (2.2–2.5 eV) [46,47] corresponding to the
green light region and direct transition [29,48–51], CuGaS2 nanocrystals could be an optimum candidate for the
QDSSCs. However, very few studies on CuGaS2 QDSSCs
were reported. A survey is essential for further experimental efforts in CuGaS2 QDSSCs in order to achieve ecofriendly processes in preparative protocols.
Herein, the CuGaS2 QDs directly and homogeneously
grew on TiO2 nanocrystals (named as TiO2@CGS) for
QDSSCs by a vacuum one-pot nanocasting method. CuGaS2 QDs with particle size of 2–5 nm were anchored on
the surface of TiO2 nanoparticles directly without organic
School of Materials Science and Engineering, Department of Engineering Mechanics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China
Engineering Research Center of Nano-Geo Materials of Ministry of Education, China University of Geosciences, Wuhan 430074, China
Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055,
China
Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-2120, USA
Hesteel Group Technology Research Institute, Shijiazhuang 050000, China
These authors contributed equally to this work.
Corresponding authors (emails: jinjinzhao2012@163.com (Zhao J); liujx02@hotmail.com (Liu J))
September 2017 | Vol. 60 No. 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
$57,&/(6 SCIENCE CHINA Materials
í3.0
- eí
CB
í4.0 eV
í4.0
- eí
CB
í3.85 eV
- eí
CB
í3.96 eV
VB
í5.45 eV
+ h+
í5.0
í6.0
VB
í7.2 eV
í7.0
VB
í6.56 eV
+ h+
+ h+
í8.0
FTO
TiO2
CuGaS2
N719
Ií/I3í
Ee (eV)
Vacuum level
Figure 1 A schematic illustration of the relative band energy levels for
charge transfer in the FTO/TiO2/CGS/N719 electrolyte. E)
linker molecules. The relative band energy levels for holes
and electrons transfer in the FTO/TiO2/CGS/N719 electrolyte based QDSSCs are illustrated in Fig. 1. Because of
the quantum confinement effects, the CuGaS2 QDs hold a
higher conduction band (CB) edge, which facilitates the
photoelectron injection from the excited CuGaS2 QDs
into TiO2 nanoparticles [52–54]. Moreover, the CuGaS2
QDs in the TiO2@CGS nanocrystals could act as complimentary sensitizers to enhance the light harvesting
properties in dye sensitized solar cell (DSSC).
sequently, the solution was filtered and the products were
washed with deionized water and dried at 80°C. Finally,
the obtained powders were sintered at 610°C for 10 min
after being kept at 300°C for 90 min and 500°C for
240 min. During the entire sintering process, the heating
rate was kept at a constant of 2°C min−1. After sintering,
the products were dispersed in deionized water and nitric
acid (65%) until the pH of this suspension reached to
about 2. The suspension was vigorously stirred at 80°C for
8 h to obtain TiO2 nanoparticles.
Preparation of TiO2@CGS nanoparticles
TiO2 nanoparticles were put into a sealed container and
subjected to vacuum. After vacuumed for 30 min, the
mixed solution of GaCl3 (0.2 mol L−1) was allowed to
enter into the vacuum system, and then held for 10 min
before the solvent was fully removed by evaporation. The
precipitate was dried in vacuum oven at 80°C for 8 h.
After drying, the mixed powder was washed twice with
ethanol and dried in vacuum oven again. This entire
procedure described above was repeated twice except that
the GaCl3 solution used was replaced by 0.2 mol L−1 CuCl2
aqueous solution and 0.4 mol L−1 Na2S aqueous solution,
respectively. Finally, the sample was calcined in Ar gas at
500°C for 1 h to obtain TiO2@CGS nanoparticles.
EXPERIMENTAL SECTION
Chemicals
Copper chloride (CuCl2), sodium sulfide, titanium tetrachloride (99.5%), ethanol (98%), nitric acid (65%) were
bought from Sinopharm Chemical Reagent Co., Ltd; F127
(CAS No. 9003-11-6) was purchased from Sigma-Aldrich,
Inc. Polyethylene glycol (PEG; 20000 in molecular weight)
and gallium(III) chloride (GaCl3) were purchased from
J&K. The sensitizer N719 (cis-di(thiocyanato)-N,N-bis(2,
2ʹ-bipyridyl-4,4ʹ-dicarboxylate)Ru (II)bis-tetrabuty lammonium) electrolyte, surlyn film were purchased from
Yingkou Opvtech New Energy Co., Ltd.
Synthesis of the TiO2@CGS film and fabrication of device
Synthesis of TiO2 nanoparticles
The synthesis of TiO2 nanoparticles was as the following
procedure [54]. 2.97 g F127 was dissolved in 36.88 g
ethanol at 40°C and stirred for 30 min to obtain a clear
solution. After that, 3.4 g TiCl4 was added into the prepared clear F127 solution. The precursor solution was
then placed into a Teflon-lined stainless steel autoclave
(100 mL in capacity) after stirring for 8 h under 40°C. The
autoclave was placed in an oven at 160°C for 16 h. Sub-
Preparation of mesoporous TiO2 films and TiO2@CGS film
The mesoporous TiO2 films were prepared by the doctorblade method [55]. The TiO2 paste was made from the
TiO2 nanoparticles synthesized in the previous section.
Briefly, 0.8 g TiO2 was added into a mixed solution of
ethanol/deionized water (3:1) and ultrasonicated for
30 min after the addition of PEG aqueous which acted as
the pore-forming material. After that, the mixture was
grinded into ropiness in agate mortar. A mask, with a
window encompassed by 3M scotch tape, was used to
define the 5 mm × 5 mm area which was used to spread
the paste dropped on edge of the window with a glass
slide on the fluorine doped tin oxide (FTO) conductive
glass (SnO2:F coated glass). Subsequently, the as-prepared
TiO2 films were sintered in air with a heating rate of
2°C min−1 from room temperature to 300°C for 30 min,
and to 500°C for 60 min. The synthesis of mesoporous
TiO2@CGS film was as the same procedure as the one
described above.
Fabrication of quantum dot-dye bilayer-sensitized solar
cells (QDBSC)
The mesoporous TiO2 film and TiO2@CGS film were
sensitized with N719 dye by direct adsorption. Firstly, the
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
September 2017 | Vol. 60 No. 9
SCIENCE CHINA Materials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . $57,&/(6
RESULTS AND DISCUSSION
To characterize the phase structures and crystal size, the
XRD pattern of the TiO2@CuGaS2 nanoparticles is shown
in Fig. 2, which well matches with that of anatase phase
TiO2 (JCPDS 21-1272) and CuGaS2. Although some peaks
of TiO2 and CuGaS2 were seen overlapped, the XRD of
CuGaS2 exhibited several diffraction peaks in consistent
with 2θ values of 29.12°, 48.07°, 48.60°, 57.17°, 58.15°, and
70.36°, and these peaks can be attributed to (112), (220),
(204), (312), (116), and (400) planes of CuGaS2 (JCPDS
25-0279). The XRD diffraction features of TiO2@CuGaS2
sample indicated the composite materials of anatase TiO2
and gallite CuGaS2, which conformed well with the electron diffraction patterns of TEM in Fig. 3.
Fig. 3 shows the TEM images of TiO2@CGS nanocrystals and bare TiO2 particles. The TEM images of bare
TiO2 nanoparticles in Fig. 3a and the synthesized TiO2@
CGS nanocrystals in Fig. S1 and Fig. 3b show that the
diameter of the prepared TiO2 particles is about
20–50 nm, and the CuGaS2 QDs have an average size of
approximately 2–5 nm. The high resolution TEM images
in Fig. 3c exhibit the crystalline structure of the synthesized CuGaS2 QDs. Fig. 3d is the spectra taken via energydispersive spectroscopy (EDS) for TiO2@CGS nanocrystals, which shows the existence of Cu, Ga, S elements in
the QDs with the ratio of Cu/Ga/S to be 1.04
(±0.1):1.0:1.90(±0.2). SEM-EDS mapping of TiO2@CGS
nanocrystals is shown in Fig. 4 to characterize the elemental distribution. The molar ratio of CuGaS2 in
TiO2@CGS could be determined to be 5.4% by EDS
analysis and the QDs are off-stoichiometric CuGaS2 with
a uniform elemental distribution.
250
◆
200
TiO2 ◆
CuGaS2 #
(112)
(101)
#
#
◆
(220)
(400)
(215)
◆
◆
(204)
(211)
(312)
(116)
(200)
◆
(105)
◆
#
#
(116)
50
(112)
(004)
100
(204)
(220)
#
150
(103)
Characterization
X-ray diffraction (XRD) patterns of powders were obtained using D8 Advance (Germany) diffractometer with
Cu Kα radiation (40 kV and 40 mA) with a scanning rate
of 4° min−1 for wide angle tests. The N2 sorption measurements were performed by using Micromeritics Tristar
3000 for mesoporosity and Micromeritics ASAP 2020 for
porosimeters and microporosity at 77 K, respectively. The
mesoporous specific surface area and the pore size distribution were calculated using the Brunauer–Emmett–
Teller (BET) method. Scanning electron microscopy
(SEM) analysis was performed on a Hitachi-S-4800 electron microscope. Transmission electron microscopy
(TEM) images were obtained on a JEOL-2010F electron
microscope operated at 200 kV. The UV-vis absorbance
spectra were measured by a Shimadzu UV-2550 spectrophotometer. Symmetric dummy cells were used for the
electrochemical impedance spectroscopy (EIS) measurements. The EIS measurements were conducted by using a
computer-controlled
electrochemical
workstation
(CHI660A, Chenhua, Shanghai) in dark. Photovoltaic
measurement (J-V) was recorded with a Newport Oriel
class AAA solar simulator (model 92250A-1000) equipped with a class A 300 W xenon light source powered by a
Newport power supply (model 69907). The power output
of the lamp was calibrated to 1 Sun (AM1.5G,
100 mW cm−2) using a certified Si reference cell (VLSI
standard, S/N 10510-0031). The current-voltage characteristics of each cell were measured with a Keithley2400 digital source meter. Photovoltaic performance was
characterized by using a mask with an aperture area of
0.25 cm2. The incident photon-to-current efficiency
(IPCE) was measured in DC mode with a 1/4 m double
monochromator (Crowntech DK242), a multi-meter
(Keithley 2000), and two light sources depending on the
wavelength range required (300–600 nm: xenon lamp,
300 W; 600–900 nm: tungsten-halogen lamp, 150 W). The
monochromatic light intensity for IPCE efficiency was
calibrated with a reference silicon photodiode. All the
measurements were conducted under ambient conditions.
Intensity (a.u.)
as-prepared TiO2 film and TiO2@CGS film were heated to
80°C and immersed into the N719 ethanol solution
(0.5 mmol L−1) for 24 h. After rinsing the film in solution
by ethanol and drying in air, the desired mesoporous
TiO2/N719 film and TiO2@CGS/N719 electrodes were
obtained. The photovoltaic cells were assembled with the
mesoporous TiO2/N719 or TiO2@CGS/N719 photoelectrode, Pt coated counter electrode, and sealing material
(OPV-SN-60) with a thickness of 60 μm. Commercially
available electrolyte of I3−/I− was injected into the space
between the photoelectrode and the counter electrode.
◆
◆
◆
#
0
10
20
30
40
50
2ș (°)
60
70
80
Figure 2 XRD pattern of the TiO2@CGS nanoparticles.
September 2017 | Vol. 60 No. 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
$57,&/(6 SCIENCE CHINA Materials
a
b
10 nm
10 nm
250
d
c
O
Ti
Counts
200
CuGaS2 (112)
d = 0.31 nm
150
C
100
Cu
50
Cu
Ga
Ti
SS
CuGa
0
0
5 nm
4000
6000
Energy (keV)
2000
8000
10000
Figure 3 TEM images of (a) TiO2 nanoparticles and (b) the synthesized TiO2@CGS nanocrystals. Inset of (b) is the selected-area electron diffraction
pattern of TiO2@CGS. (c) HR-TEM image of TiO2@CGS taken from the area within red square in (b). (d) Simultaneous EDS spectra of TiO2@CGS.
a
5 μm
c
b
5 μm
5 μm
d
e
f
5 μm
5 μm
5 μm
Figure 4 SEM images (a) and (b) of TiO2@CGS; SEM-EDS elemental mapping of (c) Ti, (d) Cu, (e) Ga and (f) S.
Fig. 5 shows the N2 adsorption-desorption isotherms
measured for TiO2@CGS nanoparticles and naked TiO2 to
characterize their specific surface areas and pore volumes.
Both isotherms of TiO2@CGS and TiO2 nanoparticles
exhibit hysteresis loops of type-H1, with the adsorption
and desorption jumps at 0.6 and 1.0, which is characteristic for mesoporous materials. According to the Barrett-
Joyner-Halenda (BJH) method and derived from the
desorption branch shown in Fig. 5 and Table 1, the pore
size distribution of TiO2@CGS shows a smaller mesopore
size of 3.6 nm compared to 10.4 nm of TiO2 nanoparticles. The BET surface area and mesopore volume of
TiO2@CGS are measured to be 22.03 m2 g−1 and
0.098 cm3 g−1, respectively, which are 51.3% and 40.2%
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
September 2017 | Vol. 60 No. 9
SCIENCE CHINA Materials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . $57,&/(6
120
10.4 nm
100
80
60
shorter than 400 nm, which is in the region of ultraviolet.
TiO2 film with CGS could absorb light with wavelength
shorter than 530 nm, and the two absorption peaks of
N719 dye are at 430 and 520 nm, respectively. By sensitizing CuGaS2 QDs in TiO2/N719, the absorption spectra
of the TiO2@CGS/N719 films got a significant red-shift
and extended to around 700 nm. Fig. 6b shows the plots
of (Ahν)2 versus hν (A = absorbance, h = Planck’s constant, and ν = frequency) for all samples, from which it is
possible to extrapolate the slope near the absorption onset
and to extract the energy of band gap. The curves yielded
band gaps of 2.69 eV for TiO2@CGS, 2.25 eV for TiO2/
N719, and 2.03 eV for TiO2@CGS/N719, respectively.
Thus, the introduction of sensitized CuGaS2 QDs could
enhance the light harvesting ability in TiO2/N719, which
can be attributed to the following factors: a higher intensity and a red shift of light absorption edge from
600 nm to around 700 nm. Such improvement could lead
to an increased electron concentration in TiO2/N719
substrate sensitized with CuGaS2 QDs [56–62].
Co-sensitization of semiconductor QDs and organic
dyes has also been investigated as an effective strategy for
enrichment [54,55,63,64]. The J-V curves in Fig. 7 shows
that these two absorbers also have vital contributions on
the overall cell performance. The bisensitized device
(TiO2@CGS/N719) is revealed to have a great improvement on its photovoltaic performance, compared to the
one with monosensitizers. Table 2 lists the open circuit
potential (Voc), short circuit current density (Jsc), fill factor
TiO2
TiO2@CGS
Pore volume (cm3 gí1 nmí1)
Volume adsorbed (cm3 gí1)
0.020
40
0.015
0.010
0.005
3.6 nm
0.000
3
6
9
Pore diameter (nm)
12
15
20
0
0.0
0.2
0.4
0.6
Relative pressure (P/P0)
0.8
1.0
Figure 5 N2 adsorption–desorption isotherms and the corresponding
pore diameter distribution curves of different samples (inset).
less than those of TiO2 nanoparticles, in accordance with
previously reported studies [54]. Smaller particle size
(2–5 nm) of the CGS QDs led to a severe aggregation
within the mesopores, and thus decreased the mesopore
volume. Due to the larger density of CGS QDs, even with
an increased surface area, the specific surface area calculated via BET method got reduced. Whereas, the decreased BET surface area and mesopore volume of
TiO2@CGS are still good enough to enrich the loading
capacity of the N719 dye [55].
Fig. 6a shows the UV-vis absorption spectra of bare
TiO2 film and the TiO2@CGS film before and after sensitized with N719. The absorption onset for TiO2 film is
Table 1 Structural parameters of TiO2 nanoparticles and TiO2@CGS
2
3
BET surface area (m g )
Mesopore volume (cm g )
TiO2@CGS
22.03
0.098
3.6
TiO2
45.24
0.164
10.4
−1
a
b
TiO2@CGS/N719
1.0
TiO2/N719
0.24
TiO2@CGS
0.8
TiO2@CGS/N719 Eg=2.03 eV
TiO2/N719
Eg=2.25 eV
TiO2@CGS
Eg=2.69 eV
0.18
0.6
(AhȞ)2
Abs.
TiO2
0.4
0.12
0.06
0.2
0.0
400
0.30
Mesopore size (nm)
−1
450
500
550
600
Wavelength (nm)
650
700
0.00
1.8
2.0
2.2
2.4
hȞ (eV)
2.6
2.8
3.0
2
Figure 6 (a) UV-vis absorption spectra of different samples; (b) plots of (Ahν) against the photon.
September 2017 | Vol. 60 No. 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
$57,&/(6 SCIENCE CHINA Materials
(FF) and total energy conversion efficiency (η) of these
devices. The Voc increased from 704 to 756 mV (+52 mV)
and Jsc increased from 14.88 to 18.36 mA cm−2 (+23.4%)
after co-sensitized with CGS. However, FF reduced from
0.572 to 0.53, mainly owing to increased charge carrier
recombination rate and larger shunt resistance indicated
by the slope of Jsc point of the J-V curve. Consequently, in
one sun illumination condition, η of the bisensitized device with TiO2@CGS/N719 as photoanode could reach up
to 7.4%, which is 23% higher than that with TiO2@N719
[61,62].
20
TiO2@CGS
Current density (mA cmí2)
TiO2/N719
16
TiO2@CGS/N719
12
8
4
0
0.0
0.1
0.2
0.3
0.4
0.5
Voltage (V)
0.6
0.7
0.8
Figure 7 Photocurrent density–voltage characteristic curves of different solar cells.
Attributed to the red-shift visual light absorption,
TiO2@CGS/N719 co-sensitized solar cell displays a higher
energy conversion efficiency. The IPCE spectra shown in
Fig. 8 investigate the role of CuGaS2 quantum dots. The
trend of the IPCE spectra of TiO2@CGS/N719 co-sensitized solar cell and TiO2/N719 dye sensitized solar cell are
in accordance with that of UV-vis absorption spectra. The
calculated Jsc values of TiO2@CGS/N719, TiO2/N719,
TiO2@CGS devices are 18.1, 14.2, and 5.0 mA cm−2, respectively, in consistent with the J-V curves. By introducing the CuGaS2 QDs as a co-sensitizer, the photon-toelectron conversion efficiency got significantly enhanced.
To investigate the effects of QDs on charge transport
and recombination at the photoanode, EIS under dark
was carried out to exhibit the representative impedance
plots of cells based on TiO2@CGS, TiO2/N719 and
TiO2@CGS/N719 photoanodes, shown in Fig. 9. The
equivalent circuit in Fig. 9 is used to fit the impedance
measurements, which is composed of resistance-capacitance pairs and a distributed element to describe redefinable characteristics of the electrode and its interfaces
with the electrolyte [65]. The resistance R records recombination in the solar cell, while C relates to the carrier
accumulation and splitting of thΩe Fermi levels [66]. The
main semicircle in Fig. 9 is relevant to the charge transfer
process at the interface of anode-electrolyte. The frequency large arcs (the semicircles from 32 to 160 Ω) are
Table 2 Photovoltaic parameters of different solar cells
Voc (mV)
Jsc (mA cm )
FF
TiO2@CGS/N719
756
18.36
0.53
7.4
TiO2@CGS
672
5.26
0.649
2.29
TiO2/N719
704
14.88
0.572
6
−2
100
η (%)
60
Rs
TiO2@CGS/N719
TiO2/N719
TiO2@CGS
80
TiO2@CGS/N719
Rct1
TiO2/N719
CPE1
50
TiO2@CGS
íZƎ (ȍ)
IPCE (%)
40
60
40
30
20
20
0
350
10
0
400
450
500
550
Ȝ (nm)
600
650
700
750
Figure 8 IPCE spectra of the solar cells fabricated with different
photoanodes.
20
40
60
80
100
Zƍ (ȍ)
120
140
160
Figure 9
Impedance spectra and the inset is the corresponding
equivalent circuit.
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
September 2017 | Vol. 60 No. 9
SCIENCE CHINA Materials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . $57,&/(6
ascribed to the anode/electrolyte interfacial charge
transfer resistance or recombination (Rct1) in parallel with
the capacitance (CPE1) in the TiO2-based anodes and the
anodes/electrolyte interface. The diameter of the semicircle exhibits the charge transfer resistance (recombination) at the anodes/electrolyte interfaces [8,67,68].
Obviously, comparing devices with TiO2@CGS/N719 and
TiO2/N719 as photoanodes, the TiO2@CGS/N719 based
cell has a smaller diameter of the semicircle, which exhibits a decreased charge recombination resistance and a
certain portion of the injected charges are lost by electron
transfer from TiO2 to I3− in the electrolyte. Meanwhile, the
TiO2@CGS/N719 photoanode with doped CGS QDs and
dye shell decreased the direct contact surface area between bare TiO2 surface and the electrolyte, which reduced the charge recombination resistance.
7
8
9
10
11
12
13
CONCLUSIONS
Novel visible-light induced TiO2@CuGaS2 nanocrystals
have been successfully synthesized via the vacuum onepot-nanocasting process, with CuGaS2 (2–5 nm) grown
uniformly on TiO2 (20–50 nm). The TiO2@CuGaS2/N719
photoanode shows an excellent absorbance on broad
wavelength light due to the narrow energy band gap (Eg =
2.03 eV). Photoanodes with the TiO2 and TiO2@CuGaS2
nanocrystals were fabricated and the device with TiO2@
CuGaS2/N719 has a power conversion efficiency η of
7.4%, which is 23% higher than that of monosensitized
dye solar cell. Anchoring CuGaS2 QDs on semiconductor
nanoparticles to form QDs/dye co-sensitized solar cells is
a promising and feasible approach to enhance light absorption, charge carrier generation as well as to facilitate
electron injection comparing to conventional dye sensitized solar cells.
14
15
16
17
18
19
20
Received 23 May 2017; accepted 15 July 2017;
published online 29 August 2017
21
1
2
3
4
5
6
Kamat PV. Quantum dot solar cells. Semiconductor nanocrystals
as light harvesters. J Phys Chem C, 2008, 112: 18737–18753
Nozik AJ. Quantum dot solar cells. Phys E-Low-dimensional Syst
Nanostruct, 2002, 14: 115–120
Sargent EH. Colloidal quantum dot solar cells. Nat Photon, 2012,
6: 133–135
Zhao H, Wu Q, Hou J, et al. Enhanced light harvesting and electron collection in quantum dot sensitized solar cells by TiO2 passivation on ZnO nanorod arrays. Sci China Mater, 2017, 60: 239–
250
Ren F, Li S, He C. Electrolyte for quantum dot-sensitized solar cells
assessed with cyclic voltammetry. Sci China Mater, 2015, 58: 490–
495
Grätzel M. Dye-sensitized solar cells. J Photochem PhotoBiol C-
22
23
24
25
Photochem Rev, 2003, 4: 145–153
Chang JY, Chang SC, Tzing SH, et al. Development of nonstoichiometric CuInS2 as a light-harvesting photoanode and catalytic photocathode in a sensitized solar cell. ACS Appl Mater
Interfaces, 2014, 6: 22272–22281
Huang X, Huang S, Zhang Q, et al. A flexible photoelectrode for
CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). Chem
Commun, 2011, 47: 2664–2666
Kim MR, Ma D. Quantum-dot-based solar cells: recent advances,
strategies, and challenges. J Phys Chem Lett, 2015, 6: 85–99
Zheng X, Yu D, Xiong FQ, et al. Controlled growth of semiconductor nanofilms within TiO2 nanotubes for nanofilm sensitized solar cells. Chem Commun, 2014, 50: 4364–4367
Coughlan C, Ibáñez M, Dobrozhan O, et al. Compound copper
chalcogenide nanocrystals. Chem Rev, 2017, 117: 5865–6109
Tian J, Cao G. Control of nanostructures and interfaces of metal
oxide semiconductors for quantum-dots-sensitized solar cells. J
Phys Chem Lett, 2015, 6: 1859–1869
Hossain MA, Jennings JR, Koh ZY, et al. Carrier generation and
collection in CdS/CdSe-sensitized SnO2 solar cells exhibiting unprecedented photocurrent densities. ACS Nano, 2011, 5: 3172–
3181
Kongkanand A, Tvrdy K, Takechi K, et al. Quantum dot solar cells.
Tuning photoresponse through size and shape control of CdSe
−TiO2 architecture. J Am Chem Soc, 2008, 130: 4007–4015
Lee HJ, Bang J, Park J, et al. Multilayered semiconductor (CdS/
CdSe/ZnS)-sensitized TiO2 mesoporous solar cells: all prepared by
successive ionic layer adsorption and reaction processes. Chem
Mater, 2010, 22: 5636–5643
Lee YL, Lo YS. highly efficient quantum-dot-sensitized solar cell
based on co-sensitization of CdS/CdSe. Adv Funct Mater, 2009, 19:
604–609
Ren S, Chang LY, Lim SK, et al. Inorganic–organic hybrid solar
cell: bridging quantum dots to conjugated polymer nanowires.
Nano Lett, 2011, 11: 3998–4002
Robel I, Subramanian V, Kuno M, et al. Quantum dot solar cells.
Harvesting light energy with cdse nanocrystals molecularly linked
to mesoscopic TiO2 films. J Am Chem Soc, 2006, 128: 2385–2393
Santra PK, Kamat PV. Mn-doped quantum dot sensitized solar
cells: a strategy to boost efficiency over 5%. J Am Chem Soc, 2012,
134: 2508–2511
Santra PK, Kamat PV. Tandem-layered quantum dot solar cells:
tuning the photovoltaic response with luminescent ternary cadmium chalcogenides. J Am Chem Soc, 2013, 135: 877–885
Guijarro N, Lana-Villarreal T, Lutz T, et al. Sensitization of TiO2
with PbSe quantum dots by SILAR: how mercaptophenol improves
charge separation. J Phys Chem Lett, 2012, 3: 3367–3372
Luther JM, Gao J, Lloyd MT, et al. Stability assessment on a 3%
bilayer PbS/ZnO quantum dot heterojunction solar cell. Adv Mater, 2010, 22: 3704–3707
Parsi Benehkohal N, González-Pedro V, Boix PP, et al. Colloidal
PbS and PbSeS quantum dot sensitized solar cells prepared by
electrophoretic deposition. J Phys Chem C, 2012, 116: 16391–
16397
Tian J, Shen T, Liu X, et al. Enhanced performance of PbSquantum-dot-sensitized Solar cells via optimizing precursor solution and electrolytes. Sci Rep, 2016, 6: 23094
Yu X, Zhu J, Zhang Y, et al. SnSe2 quantum dot sensitized solar
cells prepared employing molecular metal chalcogenide as precursors. Chem Commun, 2012, 48: 3324–3326
September 2017 | Vol. 60 No. 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
$57,&/(6 SCIENCE CHINA Materials
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
Guimard D, Morihara R, Bordel D, et al. Fabrication of InAs/GaAs
quantum dot solar cells with enhanced photocurrent and without
degradation of open circuit voltage. Appl Phys Lett, 2010, 96:
203507
Yu P, Zhu K, Norman AG, et al. Nanocrystalline TiO2 solar cells
sensitized with InAs quantum dots. J Phys Chem B, 2006, 110:
25451–25454
Heo JH, Im SH, Kim H, et al. Sb2S3-sensitized photoelectrochemical cells: open circuit voltage enhancement through the
introduction of poly-3-hexylthiophene interlayer. J Phys Chem C,
2012, 116: 20717–20721
Lv X, Yang S, Li M, et al. Investigation of a novel intermediate
band photovoltaic material with wide spectrum solar absorption
based on Ti-substituted CuGaS2. Sol Energ, 2014, 103: 480–487
Nozik AJ, Beard MC, Luther JM, et al. Semiconductor quantum
dots and quantum dot arrays and applications of multiple exciton
generation to third-generation photovoltaic solar cells. Chem Rev,
2010, 110: 6873–6890
Hamanaka Y, Ogawa T, Tsuzuki M, et al. Photoluminescence
properties and its origin of AgInS2 quantum dots with chalcopyrite
structure. J Phys Chem C, 2011, 115: 1786–1792
Omata T, Nose K, Otsuka-Yao-Matsuo S. Size dependent optical
band gap of ternary I-III-VI2 semiconductor nanocrystals. J Appl
Phys, 2009, 105: 073106–073106
Allen PM, Bawendi MG. Ternary I−III−VI quantum dots luminescent in the red to near-infrared. J Am Chem Soc, 2008, 130:
9240–9241
Feng J, Han J, Zhao X. Synthesis of CuInS2 quantum dots on TiO2
porous films by solvothermal method for absorption layer of solar
cells. Prog Org Coatings, 2009, 64: 268–273
Li L, Daou TJ, Texier I, et al. Highly luminescent CuInS2/ZnS core/
shell nanocrystals: cadmium-free quantum dots for in vivo imaging. Chem Mater, 2009, 21: 2422–2429
Norako ME, Brutchey RL. Synthesis of metastable wurtzite cuInSe2
nanocrystals. Chem Mater, 2010, 22: 1613–1615
Singh A, Coughlan C, Laffir F, et al. Assembly of CuIn1−xGaxS2
nanorods into highly ordered 2D and 3D superstructures. ACS
Nano, 2012, 6: 6977–6983
Chang SH, Chiu BC, Gao TL, et al. Selective synthesis of copper
gallium sulfide (CuGaS2) nanostructures of different sizes, crystal
phases, and morphologies. CrystEngComm, 2014, 16: 3323–3330
Wagner S, Shay JL, Tell B, et al. Green electroluminescence from
CdS–CuGaS2 heterodiodes. Appl Phys Lett, 1973, 22: 351–353
Tung HT, Hwu Y, Chen IG, et al. Fabrication of single crystal
CuGaS2 nanorods by X-ray irradiation. Chem Commun, 2011, 47:
9152–9154
Vahidshad Y, Mirkazemi SM, Tahir MN, et al. Facile one-pot
synthesis of polytypic (wurtzite–chalcopyrite) CuGaS2. Appl Phys
A, 2016, 122: 187
Kandiel TA, Anjum DH, Sautet P, et al. Electronic structure and
photocatalytic activity of wurtzite Cu–Ga–S nanocrystals and their
Zn substitution. J Mater Chem A, 2015, 3: 8896–8904
Zhao M, Huang F, Lin H, et al. CuGaS2–ZnS p–n nanoheterostructures: a promising visible light photo-catalyst for water-splitting hydrogen production. Nanoscale, 2016, 8: 16670–16676
Zhou Q, Kang SZ, Li X, et al. One-pot hydrothermal preparation of
wurtzite CuGaS2 and its application as a photoluminescent probe
for trace detection of l-noradrenaline. Colloids Surfs A-PhysicoChem Eng Aspects, 2015, 465: 124–129
Zhou Q, Kang SZ, Li X, et al. A facile self-assembled film assisted
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
preparation of CuGaS2 ultrathin films and their high sensitivity to
L-noradrenaline. Appl Surf Sci, 2016, 363: 659–663
Liu Z, Hao Q, Tang R, et al. Facile one-pot synthesis of polytypic
CuGaS2 nanoplates. Nanoscale Res Lett, 2013, 8: 524
Tell B, Shay JL, Kasper HM. Room-temperature electrical properties of ten I-III-VI2 semiconductors. J Appl Phys, 1972, 43: 2469–
2470
Han M, Zhang X, Zeng Z. The investigation of transition metal
doped CuGaS2 for promising intermediate band materials. RSC
Adv, 2014, 4: 62380–62386
Shay JL, Wernick JH. Ternary Chalcopyrite Semiconductors,
Growth, Electronic properties, and applications. Oxford: Pergramon Press, 1975
Xiao N, Zhu L, Wang K, et al. Synthesis and high-pressure
transformation of metastable wurtzite-structured CuGaS2 nanocrystals. Nanoscale, 2012, 4: 7443–7447
Regulacio MD, Ye C, Lim SH, et al. Facile noninjection synthesis
and photocatalytic properties of wurtzite-phase CuGaS2 nanocrystals with elongated morphologies. CrystEngComm, 2013, 15:
5214–5217
Li TL, Lee YL, Teng H. CuInS2 quantum dots coated with CdS as
high-performance sensitizers for TiO2 electrodes in photoelectrochemical cells. J Mater Chem, 2011, 21: 5089–5098
Li TL, Lee YL, Teng H. High-performance quantum dot-sensitized
solar cells based on sensitization with CuInS2 quantum dots/CdS
heterostructure. Energ Environ Sci, 2012, 5: 5315–5324
Zhao J, Zhang J, Wang W, et al. Facile synthesis of CuInGaS2
quantum dot nanoparticles for bilayer-sensitized solar cells. Dalton
Trans, 2014, 43: 16588–16592
Wang X, Wang P, Dong Z, et al. Highly sensitive fluorescence
2+
probe based on functional SBA-15 for selective detection of Hg .
Nanoscale Res Lett, 2010, 5: 1468–1473
Alonso MI, Wakita K, Pascual J, et al. Optical functions and
electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2.
Phys Rev B, 2001, 63: 075203
Yang L, McCue C, Zhang Q, et al. Highly efficient quantum dotsensitized TiO2 solar cells based on multilayered semiconductors
(ZnSe/CdS/CdSe). Nanoscale, 2015, 7: 3173–3180
Chen S, Gong XG, Walsh A, et al. Crystal and electronic band
structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: firstprinciples insights. Appl Phys Lett, 2009, 94: 041903
Jaffe JE, Zunger A. Theory of the band-gap anomaly in ABC2
chalcopyrite semiconductors. Phys Rev B, 1984, 29: 1882–1906
Nie X, Wei SH, Zhang SB. Bipolar doping and band-gap anomalies
in delafossite transparent conductive oxides. Phys Rev Lett, 2002,
88: 066405
Tell B, Shay JL, Kasper HM. Electrical properties, optical properties, and band structure of CuGaS2 and CuInS2. Phys Rev B, 1971,
4: 2463–2471
Ju T, Graham RL, Zhai G, et al. High efficiency mesoporous titanium oxide PbS quantum dot solar cells at low temperature. Appl
Phys Lett, 2010, 97: 043106
Chen L, Huang R, Ma YJ, et al. Controllable synthesis of hollow
and porous Ag/BiVO4 composites with enhanced visible-light
photocatalytic performance. RSC Adv, 2013, 3: 24354–24361
Zhao J, Wang P, Wei L, et al. Enhanced photocurrent by the cosensitization of ZnO with dye and CuInSe nanocrystals. Dalton
Trans, 2015, 44: 12516–12521
Gonzalez-Pedro V, Xu X, Mora-Sero I, et al. Modeling high-efficiency quantum dot sensitized solar cells. ACS Nano, 2010, 4:
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
September 2017 | Vol. 60 No. 9
SCIENCE CHINA Materials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . $57,&/(6
66
67
68
5783–5790
Fabregat-Santiago F, Garcia-Belmonte G, Mora-Seró I, et al.
Characterization of nanostructured hybrid and organic solar cells
by impedance spectroscopy. Phys Chem Chem Phys, 2011, 13:
9083–9118
Mahmood K, Kang HW, Park SB, et al. Hydrothermally grown
upright-standing nanoporous nanosheets of iodine-doped ZnO
(ZnO:I) nanocrystallites for a high-efficiency dye-sensitized solar
cell. ACS Appl Mater Interfaces, 2013, 5: 3075–3084
Xie Y, Joshi P, Darling SB, et al. Electrolyte effects on electron
transport and recombination at ZnO nanorods for dye-sensitized
solar cells. J Phys Chem C, 2010, 114: 17880–17888
Acknowledgements The authors thank the financial support from the
National Key Research and Development Program of China
(2016YFA0201001), the National Natural Science Foundation of China
(11627801, 51102172 and 11772207), Science and Technology Plan of
Shenzhen City (JCYJ20160331191436180), the Leading Talents of
Guangdong Province Program (2016LJ06C372), the Natural Science
Foundation for Outstanding Young Researcher in Hebei Province
(E2016210093), the Key Program of Educational Commission of Hebei
Province of China (ZD2016022), the Youth Top-notch Talents Supporting Plan of Hebei Province, the Graduate Innovation Foundation of
Shijiazhuang Tiedao University, Hebei Provincial Key Laboratory of
Traffic Engineering materials, and Hebei Key Discipline Construction
Project.
Author contributions Zhao J and Liu Z designed and engineered the
samples; Liu Z, Jia C and Kong G performed the experiments; Xue F and
Wei L performed the structural and J-V performance measurement;
Wang C and Wei L performed the data analysis; Zhao J wrote the paper
with support from Liu J and Tang H. All authors contributed to the
general discussion.
Conflict of interest
interest.
The authors declare that they have no conflict of
Supplementary information Supporting materials are available in the
online version of the paper.
September 2017 | Vol. 60 No. 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
$57,&/(6 SCIENCE CHINA Materials
Jinjin Zhao obtained her BE degree in materials science and engineering from Hebei University of Science and Technology in 2005, and her PhD in materials physics and chemistry from Shanghai Institute of Ceramics, Chinese Academy
of Sciences in 2010. She did her visiting doctoral studies at Max Plank Institute of Colloids and Interfaces, Germany, from
October 2007 to October 2008, and visiting scholar at the University of Washington from August 2015 to August 2016.
She helds faculty appointment in Shijiazhuang Tiedao University. She is interested in probing multi-physical couplings in
perovskite solar cells based on dynamic photovoltaic thermal strain.
Zhenghao Liu obtained his BE degree in materials physics from Inner Mongolia University of Technology in 2013, and
now he is a master degree candidate in the School of Materials Science and Engineering from Shijiazhuang Tiedao
University. He is interested in performing quantum dots sensitized solar cells.
Jinxi Liu received his BE degree in engineering mechanics in 1982 from Liaoning University of Engineering Technology,
Fuxin, China, and his MS and PhD degrees in 1988 and 1997 from Harbin Institute of Technology. He was a visiting
professor at the Department of Mechanical Engineering of the University of Hong Kong under Croucher Foundation
from 2000 to 2001. He is now a professor at the Department of Engineering Mechanics, Shijiazhuang Tiedao University.
His research interests are the mechanics problems of photovoltaic, piezoelectric and magneto-electric materials and
structures.
㗎ⰅCuGaS2㑠䓴⮄ⰵ㳂ⷀ㲌䂕⮈⧹⺃ⴝ㾵㚽⭥䁱㈠
䍵㆛㆓1,2,3† , 㒖䎞⼧1,3†, 㲧⼧4, シ⪛㗥1, 䍵㾨䈏1, 䁇ⴆ5, 㸛㏗䈒1,3, ㋸⺛㏗1, 㶖⧠1, 㒖㆑㻓1
䍋䄋 㧞䊋I–III–VI䔆㵎㌔㑠䓴⮄䔘㸋㲌䂕⮈⧹⭥㘕⿐ア⢎㻷⨗䇦䅍⭥⺃䁈㾵䐫. 㸳㗨⤪䇤䄜⤞ⳉㅌ2–5㚪㗸⭥㧞䊋㵎㌔CuGaS 2㑠䓴
⮄㗎Ⰵ䊻TiO2㚪㗸㋦㑄㩰, ⤜㵉⺞㦯⼯䇱〛䓴䔘㸋㑕ㅴ䐧⡙⨗㑬TiO 2@CGSⶕ⼰⤥㑰. 䁱㈠ⳃ㻷㑠䓴⮄⼮㦟㑰TiO2@CuGaS2/N719⹓㘕
⿐㲌䂕⮈⧹㾈㔫⫐⭞7.4%, 㼁ⰵ䇻⭆㘕⿐㦟㑰㲌䂕⮈⧹ⱙ䁵, 㡅⮈⧹㾈㔫㳂ⷀ㑬23%. CuGaS2㑠䓴⮄㗎Ⰵ䊻⟌⭝㳆㚪㗸㋦㑄䋗㣠㑬⹓㘕⿐
㲌䂕⮈⧹⭥⺃㹝㬶㚽㑇᱃䋗ゴ㑬⮈⼪䊹㒘䓴㭞㑠, ⪺㆙㑬⮈䓴䇱㾈䓃㧌, ㉀䇱㬏⺄㎌⭥䇇䇤㋶ヅ.
© Science China Press and Springer-Verlag Berlin Heidelberg 2017
September 2017 | Vol. 60 No. 9